STN4972S8RG - Stanson Technology

STN4972S8RG MOSFET

STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.5V z S.

Features

annel Enhancement Mode MOSFET 8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 8.5 7.5 25 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA w.