STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V z 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V z S.
annel Enhancement Mode MOSFET 7.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 30 ±20 7.2 6.0 20 1.7 2.8 1.8 -55/150 -55/150 65 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN4920S8RG |
Stanson Technology |
MOSFET | |
2 | STN4920S8TG |
Stanson Technology |
MOSFET | |
3 | STN4946 |
Stanson Technology |
MOSFET | |
4 | STN4972 |
Stanson Technology |
MOSFET | |
5 | STN4972S8RG |
Stanson Technology |
MOSFET | |
6 | STN4972S8TG |
Stanson Technology |
MOSFET | |
7 | STN4102 |
Stanson Technology |
MOSFET | |
8 | STN410D |
Stanson Technology |
MOSFET | |
9 | STN4110 |
Stanson Technology |
MOSFET | |
10 | STN4130 |
Stanson Technology |
MOSFET | |
11 | STN4186D |
Stanson Technology |
MOSFET | |
12 | STN4260 |
STANSON |
N-Channel Enhancement Mode MOSFET |