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STN4972S8RG |
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| Part Number | STN4972S8RG |
| Manufacturer | Stanson Technology |
| Description | STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applicat... |
| Features |
annel Enhancement Mode MOSFET
8.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
VGSS ID IDM IS PD TJ
TSTG RθJA
Typical
30
±20 8.5 7.5 25
2.3 2.5 1.6 -55/150
-55/150
80
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA w... |
| Document |
 STN4972S8RG Data Sheet
PDF 413.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STN4972S8TG |
Stanson Technology |
MOSFET |
|
| 2 | STN4972 |
Stanson Technology |
MOSFET |
|
| 3 | STN4920 |
Stanson Technology |
MOSFET |
|
| 4 | STN4920S8RG |
Stanson Technology |
MOSFET |
|
| 5 | STN4920S8TG |
Stanson Technology |
MOSFET |
|