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STN488DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION POWER PACK 5x6 DD DD FEATURE l 40V/25A, RDS(ON) = 2.2mΩ @VGS = 10V l 40V/12A, RDS(ON) = 2.6mΩ @VGS = 4.5V l Super high densit.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STN4822 |
Stanson Technology |
MOSFET |
|
| 2 | STN4826 |
Stanson |
Dual N-Channel Enhancement Mode MOSFET |
|
| 3 | STN4828 |
Stanson Technology |
MOSFET |
|
| 4 | STN4842 |
Semtron |
Dual N-Channel Enhancement Mode MOSFET |
|
| 5 | STN484D |
Stanson Technology |
MOSFET |
|
| 6 | STN4850 |
STANSON |
N-Channel Enhancement Mode MOSFET |
|
| 7 | STN4102 |
Stanson Technology |
MOSFET |
|
| 8 | STN410D |
Stanson Technology |
MOSFET |
|
| 9 | STN4110 |
Stanson Technology |
MOSFET |
|
| 10 | STN4130 |
Stanson Technology |
MOSFET |
|
| 11 | STN4186D |
Stanson Technology |
MOSFET |
|
| 12 | STN4260 |
STANSON |
N-Channel Enhancement Mode MOSFET |
|