■FEATURE The STN4842 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. 30V / 7.8A, RDS(ON) =16mΩ(typ.)@V.
ling code f : Green product code
D2 S2
STN4842 Rev.2.1 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■ORDERING INFORMATION
Part Number
Package Code
STN4842M-TRG
M : SOP-8
※ Year Code : 00 ~ 90, 2010 : 00 ※ Week Code : 01 ~ 54 ※ SOP-8 : Only available in tape and reel packaging.
STN4842
Handling Code TR : Tape&Reel
Shipping 2.5K/Reel
■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted )
Symbol
Parameter
Typical
VDSS Drain-Source Voltage
30
VGSS Gate-Source Voltage
±20
ID Continuous Drain Current, VGS=10VA
TA=25°C TA=70°C
7.8 6.5
IDM Pulsed Drain Cu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN484D |
Stanson Technology |
MOSFET | |
2 | STN4822 |
Stanson Technology |
MOSFET | |
3 | STN4826 |
Stanson |
Dual N-Channel Enhancement Mode MOSFET | |
4 | STN4828 |
Stanson Technology |
MOSFET | |
5 | STN4850 |
STANSON |
N-Channel Enhancement Mode MOSFET | |
6 | STN488DN |
STANSON |
N-Channel Enhancement Mode MOSFET | |
7 | STN4102 |
Stanson Technology |
MOSFET | |
8 | STN410D |
Stanson Technology |
MOSFET | |
9 | STN4110 |
Stanson Technology |
MOSFET | |
10 | STN4130 |
Stanson Technology |
MOSFET | |
11 | STN4186D |
Stanson Technology |
MOSFET | |
12 | STN4260 |
STANSON |
N-Channel Enhancement Mode MOSFET |