STN4822 - Stanson Technology

STN4822 MOSFET

STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE � 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V � 30V/6.6A, RDS(ON) = 26mΩ @VGS =.

Features

ed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 30 ±20 8.5 6.6 30 3.0 2.0 1.28 -55/150 -55/150 48 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4822 2009. V1 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition .