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STI11NM60ND |
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| Part Number | STI11NM60ND |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·100% avalanche tested ·Mi... |
| Features |
·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.3 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Sto... |
| Document |
 STI11NM60ND Data Sheet
PDF 309.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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