STH265N6F6-6AG - STMicroelectronics

STH265N6F6-6AG N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(2, 3) H2PAK-2 Order code STH265N6F6-2AG STH265N6F6-6AG S(2, 3, 4, 5, 6, 7) H2PAK-6 SC06140_HP2AK-2-6 Table 1: Device summary Marking Package 265N6F6 H2PAK-2 265N.

Features

Order code STH265N6F6-2AG STH265N6F6-6AG VDS 60 V 60 V RDS(on) max 2.1 mΩ 2.1 mΩ ID 180 A 180 A
 Designed for automotive applications
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(2, 3) H2PAK-2 Order code STH265N6F6-2AG STH265N6F6-6AG S(2, 3, 4, 5, 6, 7) H2PAK-6 SC06140_HP2AK-2-6 Table 1: Dev.