STH260N4LF7-2 - STMicroelectronics

STH260N4LF7-2 N-channel Power MOSFET

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsole6  $0Y  Order code STH260N4LF7-2 STH260N4LF7-6 Table 1. Device summary Marking.

Features

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* Order code STH260N4LF7-2 STH260N4LF7-6 VDS 40 V RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness Applications
• Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance a.