These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsole6 $0Y Order code STH260N4LF7-2 STH260N4LF7-6 Table 1. Device summary Marking.
7$% 7$%
uct(s)
d te Pro+3$.
+3$.
bsoleFigure 1. Internal schematic diagram - O'7$%
te Product(s)
*
Order code STH260N4LF7-2 STH260N4LF7-6
VDS 40 V
RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH260N4LF7-2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STH260N6F6-2 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STH265N6F6-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STH265N6F6-6AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STH200N10WF7-2 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STH200N55F3-2 |
ST Microelectronics |
Power MOSFETs | |
7 | STH22N95K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
8 | STH240N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STH240N10F7-6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STH240N75F3-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STH240N75F3-6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STH245N75F3-6 |
STMicroelectronics |
N-channel Power MOSFET |