STH22N95K5-2AG - STMicroelectronics

STH22N95K5-2AG Automotive-grade N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH22N95K5-2AG Product summary(1) Order code ST.

Features

Order code STH22N95K5-2AG VDS 950 V RDS(on) max. 330 mΩ ID 17.5 A PTOT 250 W
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status l.