STH260N6F6-2 - ST Microelectronics

STH260N6F6-2 N-CHANNEL Power MOSFET

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. $ ' 3 !-V Table 1. Device summary Marking 260N6F6 260N6F6 Package H2PAK-2 TO-220 Packaging Tape and reel Tube Order c.

Features

Type STH260N6F6-2 STP260N6F6
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■ VDSS 60 V 60 V RDS(on) max < 0.002 Ω < 0.003 Ω ID 180 A 120 A 3 1 3 N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance 2 2 H2PAK-2 TO-220 1 Application
■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. $ ' 3 !-V Table 1. Device summary Marking 260N.