This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(2, 3) H2PAK-2 Order code STH265N6F6-2AG STH265N6F6-6AG S(2, 3, 4, 5, 6, 7) H2PAK-6 SC06140_HP2AK-2-6 Table 1: Device summary Marking Package 265N6F6 H2PAK-2 265N.
Order code STH265N6F6-2AG STH265N6F6-6AG
VDS 60 V 60 V
RDS(on) max 2.1 mΩ 2.1 mΩ
ID 180 A 180 A
Designed for automotive applications
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(2, 3) H2PAK-2
Order code STH265N6F6-2AG STH265N6F6-6AG
S(2, 3, 4, 5, 6, 7) H2PAK-6
SC06140_HP2AK-2-6
Table 1: Dev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH265N6F6-6AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STH260N4LF7-2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STH260N4LF7-6 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STH260N6F6-2 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STH200N10WF7-2 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STH200N55F3-2 |
ST Microelectronics |
Power MOSFETs | |
7 | STH22N95K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
8 | STH240N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STH240N10F7-6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STH240N75F3-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STH240N75F3-6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STH245N75F3-6 |
STMicroelectronics |
N-channel Power MOSFET |