STGP35N35LZ - STMicroelectronics

STGP35N35LZ IGBT

This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. E (3) SC30180 Order codes STGB35N35LZ-1 STGB35N35LZT.

Features

• Designed for automotive applications and AEC-Q101 qualified
• Low threshold voltage
• Low on-voltage drop
• High voltage clamping feature
• Logic level gate charge
• ESD gate-emitter protection
• Gate and gate-emitter integrated resistors Application
• Automotive ignition Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. E (3) .