STGP3NB60H - ST Microelectronics

STGP3NB60H N-CHANNEL IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s S.

Features

r Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 ± 20 6 3 24 70 0.56 -65 to 150 150 Un it V V V A A A W W /o C o o C C (
•) Pulse width limited by max. junction temperature June 1999 1/8 STGP3NB60H THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.78 62.5 0.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified.