This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz). 35 A, 600 V Ultrafast IGBT Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagra.
■ Improved Eoff at elevated temperature
■ Minimal tail current
■ Low conduction losses
Applications
■ Welding
■ High frequency converters
■ Power factor correction
Description
This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).
35 A, 600 V Ultrafast IGBT
Datasheet − production data
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Markings
STGP35HF60W
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGP35N35LZ |
STMicroelectronics |
IGBT | |
2 | STGP30H60DF |
STMicroelectronics |
30A high speed trench gate field-stop IGBT | |
3 | STGP30H60DFB |
STMicroelectronics |
IGBT | |
4 | STGP30M65DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
5 | STGP30NC60K |
STMicroelectronics |
short circuit rugged IGBT | |
6 | STGP30NC60S |
STMicroelectronics |
IGBT | |
7 | STGP30NC60W |
STMicroelectronics |
ultra fast IGBT | |
8 | STGP30V60DF |
STMicroelectronics |
Trench gate field-stop IGBT | |
9 | STGP30V60F |
STMicroelectronics |
Trench gate field-stop IGBT | |
10 | STGP3HF60HD |
STMicroelectronics |
IGBT | |
11 | STGP3NB60F |
ST Microelectronics |
N-CHANNEL IGBT | |
12 | STGP3NB60H |
ST Microelectronics |
N-CHANNEL IGBT |