STGP30NC60K - STMicroelectronics

STGP30NC60K short circuit rugged IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Marking GB30NC60K GP30NC60K Package D²PAK TO-220 Packaging Tape and reel Tube Order codes STGB30NC60KT4 STGP30NC60K March 2008 Rev 2 1/15 www.st.com .

Features

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■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs 3 1 1 3 2 Applications
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■ High frequency inverters Motor drivers D²PAK TO-220 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Marking GB30NC60K GP30NC60K Package D²PAK TO-220 Packaging Tape and reel Tube Order codes STGB30NC60KT4 STGP30NC60K March 2008 Rev 2 1/15 www.st.com 15 Free Dat.