STGP30H60DF - STMicroelectronics

STGP30H60DF 30A high speed trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easie.

Features

• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short circuit rated
• Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1) Applications
• Inverter
• UPS
• PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coeffi.