This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parame.
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
G (1)
E (3)
Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGP30V60DF |
STMicroelectronics |
Trench gate field-stop IGBT | |
2 | STGP30H60DF |
STMicroelectronics |
30A high speed trench gate field-stop IGBT | |
3 | STGP30H60DFB |
STMicroelectronics |
IGBT | |
4 | STGP30M65DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
5 | STGP30NC60K |
STMicroelectronics |
short circuit rugged IGBT | |
6 | STGP30NC60S |
STMicroelectronics |
IGBT | |
7 | STGP30NC60W |
STMicroelectronics |
ultra fast IGBT | |
8 | STGP35HF60W |
STMicroelectronics |
35A 600V Ultrafast IGBT | |
9 | STGP35N35LZ |
STMicroelectronics |
IGBT | |
10 | STGP3HF60HD |
STMicroelectronics |
IGBT | |
11 | STGP3NB60F |
ST Microelectronics |
N-CHANNEL IGBT | |
12 | STGP3NB60H |
ST Microelectronics |
N-CHANNEL IGBT |