STF11NM50N - STMicroelectronics

STF11NM50N N-channel Power MOSFET

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ ' 3 !-V Table 1. Device .

Features

Order codes STD11NM50N STF11NM50N STP11NM50N
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■ VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema.