STF11NM50N |
Part Number | STF11NM50N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s ... |
Features |
Order codes STD11NM50N STF11NM50N STP11NM50N
■ ■ ■ VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema... |
Document |
STF11NM50N Data Sheet
PDF 580.82KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STF11NM50N |
INCHANGE |
N-Channel MOSFET | |
2 | STF11NM60N |
ST Microelectronics |
N-channel MOSFET | |
3 | STF11NM60N |
INCHANGE |
N-Channel MOSFET | |
4 | STF11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | STF11NM60ND |
INCHANGE |
N-Channel MOSFET |