O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficie.
123
TO-220FP
TO-2201 23
Order codes STF11NM65N
VDS
RDS(on) max.
ID
t(s) 123
I2PAKFP
uc (TO-281)
STFI11NM65N
650 V
455 mΩ
11 A
STP11NM65N
• 100% avalanche tested
d D(2, TAB)
• Low input capacitance and gate charge
ro
• Low gate input resistance
te P Applications
ole G(1)
• Switching applications
bs Description O S(3)
uct(s) - AM01475v1_noZen
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STF11NM60N |
ST Microelectronics |
N-channel MOSFET | |
2 | STF11NM60N |
INCHANGE |
N-Channel MOSFET | |
3 | STF11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
4 | STF11NM60ND |
INCHANGE |
N-Channel MOSFET | |
5 | STF11NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STF11NM50N |
INCHANGE |
N-Channel MOSFET | |
7 | STF11NM80 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STF11N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STF11N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STF11N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STF11N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STF11N65M2-045Y |
STMicroelectronics |
N-channel Power MOSFET |