This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very hig.
23 1 TO-220FP D(2)
Order code
VDS
RDS(on) max.
STF11N60M2-EP
600 V
0.595 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
ID 7.5 A
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STF11N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STF11N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STF11N65M2-045Y |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STF11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STF11N65M5 |
INCHANGE |
N-Channel MOSFET | |
6 | STF11N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STF11NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STF11NM50N |
INCHANGE |
N-Channel MOSFET | |
9 | STF11NM60N |
ST Microelectronics |
N-channel MOSFET | |
10 | STF11NM60N |
INCHANGE |
N-Channel MOSFET | |
11 | STF11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
12 | STF11NM60ND |
INCHANGE |
N-Channel MOSFET |