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STF11NM50N |
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| Part Number | STF11NM50N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor STF11NM50N FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max) ·100% avalanch... |
| Features |
·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 8.5 A IDM Drain Current-Single Pluse 34 A PD Total Dissipation @TC=25℃ 25 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storag... |
| Document |
 STF11NM50N Data Sheet
PDF 261.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STF11NM50N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STF11NM60N |
ST Microelectronics |
N-channel MOSFET |
|
| 3 | STF11NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STF11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 5 | STF11NM60ND |
INCHANGE |
N-Channel MOSFET |
|