These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFET.
Order codes VDSS
RDS(on) max
RDS(on)
*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω
*nC
11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)
*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STF11NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STF11NM50N |
INCHANGE |
N-Channel MOSFET | |
3 | STF11NM60N |
ST Microelectronics |
N-channel MOSFET | |
4 | STF11NM60N |
INCHANGE |
N-Channel MOSFET | |
5 | STF11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | STF11NM60ND |
INCHANGE |
N-Channel MOSFET | |
7 | STF11NM65N |
STMicroelectronics |
N-channel MOSFET | |
8 | STF11N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STF11N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STF11N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STF11N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STF11N65M2-045Y |
STMicroelectronics |
N-channel Power MOSFET |