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This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boas.
Order code
VDS
RDS(on) max.
STD5NM50T4
500 V
0.8 Ω
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
ID 7.5 A
G(1) S(3)
AM01475v1_noZen
Description
This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boas.
STD5NM50T4 - INCHANGE
isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD5NM50 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 2 | STD5NM50-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STD5NM50AG |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STD5NM60 |
ST Microelectronics |
N-CHANNEL MDmesh Power MOSFET |
|
| 5 | STD5NM60 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STD5NM60-1 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STD5NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | STD5NM60T4 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 9 | STD5N20 |
ST Microelectronics |
N - CHANNEL POWER MOS TRANSISTOR |
|
| 10 | STD5N20L |
STMicroelectronics |
N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET |
|
| 11 | STD5N52K3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 12 | STD5N52U |
ST Microelectronics |
N-Channel Power MOSFET |
|