S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with AM01475v1_noZen the company's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary .
TAB
23 1 DPAK
D(2, TAB)
Order code
VDS
RDS(on) max.
ID
STD5NM60T4
600 V
1.0 Ω
5A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
G(1)
Description
S(3)
This N-channel Power MOSFET is developed using STMicroelectronics'
revolutionary MDmesh technology, which associates the multiple drain process with
AM01475v1_noZen the company's PowerMESH horizontal layout. This device offers extremely low on-
resistance, high dv/dt, and excellent avalanche characteristics. Using
STMicroelectronics's proprietary .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD5NM60 |
ST Microelectronics |
N-CHANNEL MDmesh Power MOSFET | |
2 | STD5NM60 |
INCHANGE |
N-Channel MOSFET | |
3 | STD5NM60-1 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STD5NM60-1 |
INCHANGE |
N-Channel MOSFET | |
5 | STD5NM50 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STD5NM50-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STD5NM50AG |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STD5NM50T4 |
INCHANGE |
N-Channel MOSFET | |
9 | STD5NM50T4 |
STMicroelectronics |
N-channel MOSFET | |
10 | STD5N20 |
ST Microelectronics |
N - CHANNEL POWER MOS TRANSISTOR | |
11 | STD5N20L |
STMicroelectronics |
N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET | |
12 | STD5N52K3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |