The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performan.
s allowing system miniaturization and higher efficiencies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 7.5 4.7 30 100 0.8 15
– 55 to 150
(1) ISD ≤ 5A, di/dt ≤ 400A/µs, VDD ≤ V (BR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD5NM50 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STD5NM50AG |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STD5NM50T4 |
INCHANGE |
N-Channel MOSFET | |
4 | STD5NM50T4 |
STMicroelectronics |
N-channel MOSFET | |
5 | STD5NM60 |
ST Microelectronics |
N-CHANNEL MDmesh Power MOSFET | |
6 | STD5NM60 |
INCHANGE |
N-Channel MOSFET | |
7 | STD5NM60-1 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STD5NM60-1 |
INCHANGE |
N-Channel MOSFET | |
9 | STD5NM60T4 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STD5N20 |
ST Microelectronics |
N - CHANNEL POWER MOS TRANSISTOR | |
11 | STD5N20L |
STMicroelectronics |
N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET | |
12 | STD5N52K3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |