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STD5NM60 - ST Microelectronics

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STD5NM60 N-CHANNEL MDmesh Power MOSFET

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic pe.

Features

Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A 8 A(1) Pw 96 W 96 W 100 W 100 W 30 W
■ 100% avalanche tested
■ HIgh dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ Low gate input resistance Application
■ Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and e.

The same part from a different manufacturer

Datasheet STD5NM60 - INCHANGE STD5NM60

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Stati.

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