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STD5NM50T4 |
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| Part Number | STD5NM50T4 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case ... |
| Document |
 STD5NM50T4 Data Sheet
PDF 273.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD5NM50T4 |
STMicroelectronics |
N-channel MOSFET |
|
| 2 | STD5NM50 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STD5NM50-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | STD5NM50AG |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STD5NM60 |
ST Microelectronics |
N-CHANNEL MDmesh Power MOSFET |
|