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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA.
·Drain Current
–ID= 8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
5
A
IDM
Drain Current-Single Pluse
20
A
PD
Total Dissipation @TC=25℃
96
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Te.
STD5NM60-1 - STMicroelectronics
AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, wh.
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|---|---|---|---|---|
| 1 | STD5NM60 |
ST Microelectronics |
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| 2 | STD5NM60 |
INCHANGE |
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| 3 | STD5NM60T4 |
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| 4 | STD5NM50 |
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| 5 | STD5NM50-1 |
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| 6 | STD5NM50AG |
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| 7 | STD5NM50T4 |
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| 8 | STD5NM50T4 |
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| 9 | STD5N20 |
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| 10 | STD5N20L |
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| 11 | STD5N52K3 |
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