STD4NC50 - STMicroelectronics

STD4NC50 N-CHANNEL MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. DPAK (NO SUFFIX) IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWE.

Features

kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 3.7 2.3 14.8 50 0.4 3
  –65 to 150 150 (1)ISD ≤ 3.7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (
•)Pulse width limited by safe operating area August 2001 1/9 STD4NC50/-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambien.