STD4NB40-1 - STMicroelectronics

STD4NB40-1 N-CHANNEL MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate char.

Features

) Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 400 400 ± 30 4 2.52 16 60 0.47 4
  –65 to 150 150 (1) ISD≤ 4A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C 1/10 (
•)Pulse width limited by safe operating area STD4NB40/STD4NB40-1 THERMAL DATA Rthj-case Rthj-.