STD4N20 - STMicroelectronics

STD4N20 N-CHANNEL MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SW.

Features

inuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 4 2.5 16 40 0.32 5
  –65 to 150 150 (1)ISD ≤4A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C °C (
•)Pulse width limited by safe operating area February 2001 1/9 STD4N20 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Ma.