These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. 3 1 DPAK 3 2 1 TO-.
Order codes
VDSS
RDS(on) max
ID
Pw
STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3
525 V
< 2.6 Ω
2.5 A 45 W 2.5 A 20 W
(1)
2.5 A 45 W 2.5 A 45 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extrem.
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---|---|---|---|---|
1 | STD4N20 |
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N-CHANNEL MOSFET | |
2 | STD4N25 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STD4N62K3 |
ST Microelectronics |
Power MOSFET | |
4 | STD4N80K5 |
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5 | STD4N90K5 |
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N-channel Power MOSFET | |
6 | STD4NA40 |
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N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
7 | STD4NB25 |
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8 | STD4NB40 |
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N-CHANNEL MOSFET | |
9 | STD4NB40-1 |
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10 | STD4NC50 |
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11 | STD4NC50-1 |
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