This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STD4N90K5 Table 1: Device summary Marking Package 4N90.
Order code STD4N90K5
VDS 900 V
RDS(on) max. 2.10 Ω
ID 3A
Figure 1: Internal schematic diagram
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STD4N90K.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD4N20 |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STD4N25 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STD4N52K3 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STD4N62K3 |
ST Microelectronics |
Power MOSFET | |
5 | STD4N80K5 |
STMicroelectronics |
N-CHANNEL MOSFET | |
6 | STD4NA40 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
7 | STD4NB25 |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STD4NB40 |
STMicroelectronics |
N-CHANNEL MOSFET | |
9 | STD4NB40-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
10 | STD4NC50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
11 | STD4NC50-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | STD4NK100Z |
STMicroelectronics |
N-channel Power MOSFET |