STD4N25 - STMicroelectronics

STD4N25 N-CHANNEL MOSFET

STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 www.DataSheet4U.com s s s s s V DSS 250 V R DS( on) < 1.1 Ω ID 4A s s TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SU.

Features

s) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 250 250 ± 20 4 2.5 16 50 0.4 -65 to 150 150 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area December 1996 1/10 STD4N25 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.5 100 1.5 275 o o C/W C/W o C/W o C.