STB416D - SamHop

STB416D Dual Enhancement Mode Field Effect Transistor

Green Product STB416D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 18A R DS(ON) (m Ω) Max 28 43 @ VGS=10V ID -16A R DS(ON) (m Ω) Max 36 @ VGS=-10V 61 @ VGS=-4.5V @ VGS=4.5V D1 D1/D2 D2 G1 S1 G1 D1/D2 S2 G2 G.

Features

amhop.com.tw STB416D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V A nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 3 28 43 VDS=VGS , ID=250uA VGS=10V , ID=9A VGS=4.5V , ID=7.5A VDS=10V , ID=9A 1 1.9 22 32 20 700 78 60 13.5 12.2 17 19.5 .