This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWIT.
ge (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) T st g Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature
o o
D2PAK TO-263 (suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value 30 30 ± 15 40 28 160 80 0.53 7 -65 to 175 175
(1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ C V/ns
o o o
C C
(
•) Pulse width limited by safe operating area
November 1997
1/8
STB40NE03.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET | |
2 | STB40N20 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STB40N60M2 |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STB40NF03L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB40NF10 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STB40NF10-1 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STB40NF10L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB40NF20 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STB40NS15 |
STMicroelectronics |
N-CHANNEL MOSFET | |
10 | STB416D |
SamHop |
Dual Enhancement Mode Field Effect Transistor | |
11 | STB42N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STB42N65M5 |
STMicroelectronics |
N-Channel Power MOSFET |