STB42N60M2-EP - STMicroelectronics

STB42N60M2-EP N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency convert.

Features

Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected Figure 1: Internal schematic diagram D(2, TAB) Applications
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz) G(1) S(3) Order code STB42N60M2-EP STP42N60M2-EP STW42N60M2-EP Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to .