STB40NF10L - STMicroelectronics

STB40NF10L N-CHANNEL POWER MOSFET

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge driv.

Features

Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 15 40 25 160 150 1 430
  –65 to 175 175 (1) Starting T j = 25°C, I D = 20A, VDD = 40V Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area April 2001 1/9 STB40NF10L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Tempera.