STB40NS15 - STMicroelectronics

STB40NS15 N-CHANNEL MOSFET

This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Figure 1. Internal schematic diagram Table 1. Device summary Part number Marking B40NF15 Package D2PAK Packaging Tape & reel STB40NS15T4 October.

Features

www.DataSheet4U.com Type VDSS 150V RDS(on) (max) <0.052Ω ID 40A STB40NS15
■
■
■ Exceptional dv/dt capability Gate charge minimized Very low intrinsic capacitances 3 1 D2PAK Applications
■ Switching application Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Figure 1. Internal schematic diagram Table 1. Device summary Part number Marking B40NF15 Package D2PAK Packaging Tape & reel STB40NS15T4 October 2007 R.