This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.
uous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
o
Value 30 30 ± 20 40 28 160 70 0.46 250 -65 to 175 175
( 1) starting Tj = 25 oC, ID =20A , VDD = 15V
Unit V V V A A A W W /o C m/J
o o
C C
(
•) Pulse width limited by safe operating area
October 1999
1/8
STB40NF03L
THERMAL DATA
R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Pu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB40NF10 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STB40NF10-1 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB40NF10L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB40NF20 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STB40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET | |
6 | STB40N20 |
STMicroelectronics |
N-CHANNEL MOSFET | |
7 | STB40N60M2 |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STB40NE03L-20 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB40NS15 |
STMicroelectronics |
N-CHANNEL MOSFET | |
10 | STB416D |
SamHop |
Dual Enhancement Mode Field Effect Transistor | |
11 | STB42N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STB42N65M5 |
STMicroelectronics |
N-Channel Power MOSFET |