STB31L01 - SamHop Microelectronics

STB31L01 N-Channel Logic Level Enhancement Mode Field Effect Transistor

Gre r Pro STB31L01 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK) ABSOLUTE MAXIMUM RATINGS ( T C.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 100 ±20 TC=25°C TC=70°C 26 21.8 76 36 TC=25°C TC=70°C 75 52.5 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R.