STB3055L2 - SamHop

STB3055L2 MOSFET

S T P /B 3055L2 S amHop Microelectronics C orp. Nov 23, 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y VDS S 20V ID R DS (ON) ( m W ) Max 40 @ VGS = 4.5V 18A 60 @ VGS = 2.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. TO-220 and TO-263 P ackage. D D GS S TB S E R IE.

Features

therwise noted) P a ra meter S ymbol Condition OFF CHARACTERISTICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage BVDSS VGS =0V, ID =250uA IDSS VDS =16V, VGS =0V IGSS VGS = 12V, VDS = 0V VGS(th) VDS =VGS, ID = 250uA Drain-S ource On-S tate R esistance R DS(ON) VGS =4.5V, ID= 6.0A VGS =2.5V, ID= 5.2A On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS VDS = 5V, VGS = 4.5V VDS = 10V, ID =5.0A Input Capacitance Output Capacitance R everse Transfer Capacitance SWITCHING CHARA.