STB3015L - ST Microelectronics

STB3015L N-CHANNEL Power MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIO.

Features

.) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(
•) Ptot dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ±20 40 28 160 80 0.53 7
  –65 to 175 175 Unit V V V A A A W W/°C V/ns °C °C (
•)Pulse width limited by safe operating area (1)ISD [ 40 A, di/dt m 200A/ms, VDD [ V(BR)DSS, .