STB3020L - ST Microelectronics

STB3020L N-CHANNEL Power MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEE.

Features

Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. O perating Junct ion T emperature o o o D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 30 30 ± 20 40 28 160 80 0.53 -65 to 175 175 Unit V V V A A A W W /o C o o C C (
•) Pulse width limited by safe operating area March 1999 1/8 STB3020L THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max .