STB28N60M2 - STMicroelectronics

STB28N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. S(3) AM15572V1 Order code STB28N60M2 STI28N60.

Features

Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB )
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected Applications
 Switching applications
 LCC converters, resonant converters Description These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rend.