These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Pack.
Order code
STB28N60DM2 STP28N60DM2 STW28N60DM2
VDS @ TJmax.
600 V
RDS(on) max.
ID PTOT
0.16 Ω 21 A 170 W
Figure 1: Internal schematic diagram
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code STB28N60DM2 STP28N60DM2 STW28N60DM2
Description
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB28N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB28N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB28N15 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | STB28NM50N |
ST Microelectronics |
N-Channel Power MOSFET | |
5 | STB28NM50N |
INCHANGE |
N-Channel MOSFET | |
6 | STB28NM60ND |
INCHANGE |
N-Channel MOSFET | |
7 | STB28NM60ND |
STMicroelectronics |
N-Channel MOSFET | |
8 | STB200N04 |
STMicroelectronics |
Power MOSFET | |
9 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STB200N6F3 |
ST Microelectronics |
Power MOSFETs | |
11 | STB200NF03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STB200NF03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |