STB28N15 - SamHop Microelectronics

STB28N15 N-Channel Enhancement Mode Field Effect Transistor

STB28N15Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 150V 32A 46 @ VGS=10V 50 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) ABSOLUTE MAXIMUM.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=100°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 150 ±20 32 22.6 94 21.